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| SHINDENGEN VZ Series Power MOSFET N-Channel Enhancement type 2SK2559 ( F10F20VZ ) 200V 10A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION *oe DC/DC converters OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) *oe Power supplies of DC 12-24V input *oe Product related to Integrated Service Digital Network RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 DSS Drain-Source Voltage V 200 Gate-Source Voltage VGSS *}30 Continuous Drain Current* DC*j i ID 10 Continuous Drain Current* Peak) i IDP 20 Continuous Source Current* DC*j i IS 10 PT 40 Total Power Dissipation Single Pulse Avalanche Current IAS Tch= 25*Z 10 Dielectric Strength Vdis Terminals to case,* AC 1 minute @ 2 Mounting Torque TOR * i Recommended torque * Nm *j F 0.3 0.5 Unit *Z V A W A kV Nm Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VZ Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2559 ( F10F20VZ ) Min. 200 Typ. Max. 250 0.1 3 2.0 0.22 3.0 Unit V A ID = 1mA, VGS = 0V VDS = 200V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 150V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, RL = 20, VGS = 10V 25 840 80 290 50 140 S 0.30 4.0 V 1.5 3.12 / nC pF 100 280 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2559 20 Tc = -55C 25C 100C 15 150C Transfer Characteristics Drain Current ID [A] 10 5 VDS = 10V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2559 1 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 5A 0.1 0.01 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2559 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2559 100 Safe Operating Area 10 100s Drain Current ID [A] R DS(ON) limit 1 200s 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 2SK2559 Transient Thermal Impedance 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2559 10000 Capacitance Capacitance Ciss Coss Crss [pF] 1000 Ciss Coss 100 Crss Tc=25C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2559 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2559 200 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 150 VDD = 150V 100V 50V 100 VDS VGS 15 10 50 5 ID = 10A 0 0 10 20 30 40 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] |
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